I'm wondering if anyone have experience with ebeam lithography on SiN
membranes? Our chips have ~200nm SiN membrane on top of silicon. What's the
relation between spin speed and resist thickness? And what's the easy way to
measure the resist thickness in the fab? I found there's no standard program
in Nanometrics for measuring resist on SiN membrane.
Any input will be appreciated.
Thanks,
Bing
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