PhD Defense: Rishi Kant, Friday 3 pm, Packard 202

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Title: "Silicon Migration as a process for Micro/Nano-fabrication"

Rishi Kant

Department of Electrical Engineering
Stanford University

Date: Friday, January 23rd, 2009
Time: 3 pm (Refreshments before)
Location: Packard Building, Room 202

Abstract:

Over the last decade, designers have sought to supplement traditional micro-fabrication with the ability to create 3D curved surfaces, in order to build new and novel micro & nano-devices. One such technique is silicon migration, which can generate atomically smooth, in-plane & 3D curved structures, in a batch fabrication-compatible manner. This work focuses on the development of silicon migration as a micro/nanotechnology processing tool. Contributions were made to three essential areas: 1) Fundamental investigations into the conditions/parameters governing the silicon migration phenomenon; 2) Development and validation of a simulation tool for predicting the 3D transformation; 3) Demonstration of applications to improving photonic crystal performance and micro/nano-fluidic integration. This work develops and demonstrates the potential of silicon migration for creating a new generation of micro & nano-devices.