PhD Defense for Rishi Kant : Friday 3 pm, Packard 202

Title: "Silicon Migration as a process for Micro/Nano-fabrication"

Rishi Kant

Department of Electrical Engineering
Stanford University

Date: Friday, January 23rd, 2009
Time: 3 pm
Location: Packard Building, Room 202

Abstract:

Over the last decade, designers have sought to supplement traditional
micro-fabrication with the ability to create 3D curved surfaces, in
order to build new and novel micro & nano-devices. One such technique is
silicon migration, which can generate atomically smooth, in-plane & 3D
curved structures, in a batch fabrication-compatible manner. This work
focuses on the development of silicon migration as a
micro/nanotechnology processing tool. Contributions were made to three
essential areas: 1) Fundamental investigations into the
conditions/parameters governing the silicon migration phenomenon; 2)
Development and validation of a simulation tool for predicting the 3D
transformation; 3) Demonstration of applications to improving photonic
crystal performance and micro/nano-fluidic integration. This work
develops and demonstrates the potential of silicon migration for
creating a new generation of micro & nano-devices.